We have recently developed a mass-producible method for growth of semiconductor nanowires using conventional plasma sputtering, which were aligned vertically on selective area of substrated surfaces.  Nanowires are currently been fabricated using chemical vapor deposition (CVD) method based on vapor-liquid-solid (VLS) technology. This method, however, is not suitable for the mass production of nanowires. We found that naowires such as silicon nanowires are allowed to grow easily on a substrate, e.g., a stainless steel one,.which would lead to the development of inexpensive large-sized semiconductor devices.  

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